The Effect of Nd:YAG, Semiconductor, He-Ne laser and Beta, Gamma irradiation on Leishmania tropica Promastigotes This work evaluated the effect of Nd:YAG, Semiconductor, He-Ne laser and

Abstract

This work evaluated the effect of Nd:YAG, Semiconductor, He-Ne laser  and Beta, Gamma irradiation on  Leishmania tropica  promastigotes in vitro. The experiment included a control and tetra-plicate  of L. tropica promastigotes  exposed to Nd:YAG laser in 500  pulse between each pulse 6 sec, in wavelength 1060 A°; the effect of Semiconductor laser  in (5, 10, 20, 30) minute , with wavelength 532 nm; also use He-Ne laser in (5, 10 , 20 , 30 ) minute , with wavelength 6328 A°; and effect of Beta and Gamma irradiation by ¹³⁷Cs  isotopes  , in two  doses (1.105607×10^-7 Gy ,  for    2hr, and in dose  1.650992×10^-7 Gy for 3hr), cesium isotopes that give two type of decay Gamma and Beta Rays.   The effect of  Nd:YAG,  Semiconductor, He-Ne laser  and Beta, Gamma irradiation  on the viability of  L. tropica  promastigote   was determined using the colorimetric MTT assay, the  number of viable cells of L. tropica  was fewer than control (without exposure to laser and irradiation ). Nd:YAG laser, Semiconductor laser, He-Ne laser  and Beta , Gamma irradiation  was efficient in killing  L.  tropica promastigotes in vitro, and the remain of L. tropica  after exposure to  laser and irradiation was devoid flagellum  and may affect the capability of infection.